Product Category: Bipolar Transistors – BJT
RoHS: N
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 80 V
Collector- Base Voltage VCBO: 80 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 1 A
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 200 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: BC639
DC Current Gain hFE Max: 25 at 5 mA, 2 V
Height: 4.01 mm
Length: 4.77 mm
Technology: Si
Width: 2.41 mm
Brand: Diodes Incorporated
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V