Partnumber : 2SD786

Product Category:     Bipolar Transistors – BJT
RoHS:     RoHS Compliant Details
Mounting Style:     Through Hole
Transistor Polarity:     NPN
Configuration:     Single
Collector- Emitter Voltage VCEO Max:     40 V
Collector- Base Voltage VCBO:     50 V
Emitter- Base Voltage VEBO:     5 V
Collector-Emitter Saturation Voltage:     30 mV
Maximum DC Collector Current:     300 mA
Gain Bandwidth Product fT:     100 MHz
Maximum Operating Temperature:     + 125 C
Continuous Collector Current:     300 mA
DC Collector/Base Gain hfe Min:     120 at 10 mA at 6 V
DC Current Gain hFE Max:     560 at 10 mA at 6 V
Packaging:     Ammo Pack
Factory Pack Quantity:     5000
Technology:     Si